MAMFIS.net
Ion sources and traps
Open projects - investors are welcome
FIB–MaMFIS:
The noble gas ion source for focused ion beam (FIB) technology.
Left photo: Installation on the test chamber
Right photo: Ionization cell
Pointed needle for noble gas penetration
Uni–MaMFIS (primary assembling):
The universal MaMFIS is intended for ionization of atomic elements within a wide range of electron
beam energies. For example, xenon ions in the charge states from +4 to +52 can be efficiently
produced in the installation. The expected yield of Xe52+ is at least 300 ions per second.
The project parameters:
Operational regime
EBIS
MaMFIS
Electron beam energy Ee (eV)
200 – 12000
up to 30000
Electron current (mA)
10 – 200
200
Electron current density (A/cm2)
20 – 500
20000
Length of ion trap (cm)
2
0.1
MaMFIT – 30/60:
New project, which represents further development of the MaMFIS technology, has been elaborated both theoretically and engineeringly.
Objectives:
- efficient ionization of atomic electrons with the binding energies of up to 40 keV;
- experimental test of the physical basic and technical design for the next generation of devices of the SuperMaMFIS family with the electron beam energies of up to 200 – 300 keV.
Objectives:
- efficient ionization of atomic electrons with the binding energies of up to 40 keV;
- experimental test of the physical basic and technical design for the next generation of devices of the SuperMaMFIS family with the electron beam energies of up to 200 – 300 keV.
Electron beam energy:
up to 60 keV
Electron current:
up to 100 mA